Search results for "Extreme ultraviolet lithography"
showing 10 items of 22 documents
SphinX soft X-ray spectrophotometer: Science objectives, design and performance
2011
The goals and construction details of a new design Polish-led X-ray spectrophotometer are described. The instrument is aimed to observe emission from entire solar corona and is placed as a separate block within the Russian TESIS X- and EUV complex aboard the CORONAS-PHOTON solar orbiting observatory. SphinX uses silicon PIN diode detectors for high time resolution measurements of the solar spectra in the range 0.8–15 keV. Its spectral resolution allows for discerning more than hundred separate energy bands in this range. The instrument dynamic range extends two orders of magnitude below and above these representative for GOES. The relative and absolute accuracy of spectral measurements is e…
Backward transition radiation in the extreme ultraviolet region as a tool for the transverse beam profile diagnostic
2014
The present article summarizes the results of two experiments which were performed to study the radiation properties of backward transition radiation (BTR) in the extreme ultraviolet (EUV) region. This wavelength region is of particular interest for transverse beam profile imaging, because the spatial resolution is improved as a result of the reduced contribution in the imaging process of the fundamental diffraction limit. In addition, the influence of coherent effects in the transition radiation emission process, which have been observed in the visible region, might be mitigated. The first experiment, dedicated to the investigation of the BTR angular characteristics, indicates that the rad…
X-Raying the Dark Side of Venus - Scatter from Venus Magnetotail?
2016
This work analyzes the X-ray, EUV and UV emission apparently coming from the Earth-facing (dark) side of Venus as observed with Hinode/XRT and SDO/AIA during a transit across the solar disk occurred in 2012. We have measured significant X-Ray, EUV and UV flux from Venus dark side. As a check we have also analyzed a Mercury transit across the solar disk, observed with Hinode/XRT in 2006. We have used the latest version of the Hinode/XRT Point Spread Function (PSF) to deconvolve Venus and Mercury X-ray images, in order to remove possible instrumental scattering. Even after deconvolution, the flux from Venus shadow remains significant while in the case of Mercury it becomes negligible. Since s…
At-wavelength inspection of sub-40 nm defects in extreme ultraviolet lithography mask blank by photoemission electron microscopy.
2007
A new at-wavelength inspection technology to probe nanoscale defects buried underneath Mo/Si multilayers on an extreme ultraviolet (EUV) lithography mask blank has been implemented using EUV photoemission electron microscopy (EUV-PEEM). EUV-PEEM images of programmed defect structures of various lateral and vertical sizes recorded at an ~13.5 nm wavelength show that 35 nm wide and 4 nm high buried line defects are clearly detectable. The imaging technique proves to be sensitive to small phase jumps, enhancing the edge visibility of the phase defects, which is explained in terms of a standing wave enhanced image contrast at resonant EUV illumination.
Actinic EUVL mask blank defect inspection by EUV photoelectron microscopy
2006
A new method for the actinic at-wavelength inspection of defects inside and ontop of Extreme Ultraviolet Lithography (EUVL) multilayer-coated mask blanks is presented. The experimental technique is based on PhotoElectron Emission Microscopy (PEEM) supported by the generation of a standing wave field inside and above the multilayer mask blank when illuminated near the resonance Bragg wavelength at around 13.5 nm wavelength. Experimental results on programmed defect samples based on e-beam lithographic structures or PSL equivalent silica balls overcoated with an EUV multilayer show that buried defects scaling down to 50 nm in lateral size are detectable with further scalability down to 30 nm …
Laser Beam Lithography For 3-D Surface Patterning
1993
A low power laser processing unit, for microlithographic applications on non-planar surfaces, is described. By combining proper laser beam handling, micropositioning, software control and surface coating techniques, a 5-axis robotic system for laser writing has been set up. Light from a He-Cd laser source is fiber-delivered to a writing head, which moves around a resist coated solid object. After exposure, traditional wet processing can be applied. The unit is capable of patterning metal films deposited on samples up to a size of 50x50x100 mm, with 5 micrometer spatial resolution. An application in 3-D circuit fabrication is presented.
Actinic inspection of sub-50 nm EUV mask blank defects
2007
A new actinic mask inspection technology to probe nano-scaled defects buried underneath a Mo/Si multilayer reflection coating of an Extreme Ultraviolet Lithography mask blank has been implemented using EUV Photoemission Electron Microscopy (EUV-PEEM). EUV PEEM images of programmed defect structures of various lateral and vertical sizes recorded at around 13 nm wavelength show that 35 nm wide and 4 nm high buried line defects are clearly detectable. The imaging technique proves to be sensitive to small phase jumps enhancing the visibility of the edges of the phase defects which is explained in terms of a standing wave enhanced image contrast at resonant EUV illumination.
Inspection of EUVL mask blank defects and patterned masks using EUV photoemission electron microscopy
2008
We report on recent developments of an "at-wavelength" full-field imaging technique for inspection of multilayer mask blank defects and patterned mask samples for extreme ultraviolet lithography (EUVL) by EUV photoemission electron microscopy (EUV-PEEM). A bump-type line defect with a width of approximately 35nm that is buried beneath Mo/Si multilayer has been detected clearly, and first inspection results obtained from a patterned TaN absorber EUVL mask sample is reported. Different image contrast of a similar width of multilayer-covered substrate line defect and on top TaN absorber square has been observed in the EUV-PEEM images, and origin of the difference in their EUV-PEEM image contra…
Phase defect inspection of multilayer masks for 13.5 nm optical lithography using PEEM in a standing wave mode
2007
We report on recent developments of an "at wavelength" full-field imaging technique for defect inspection of multilayer mask blanks for extreme ultraviolet lithography (EUVL). Our approach uses photoemission electron microscopy (PEEM) in a near normal incidence mode at 13.5 nut wavelength to image the photoemission induced by the EUV wave field on the multilayer blank surface. We analyze buried defects on Mo/Si multilayer samples down to a lateral size of 50 nm and report on first, results obtained from a six inches mask blank prototype as prerequisite for industrial usage. (c) 2007 Elsevier B.V. All rights reserved.
A new approach for actinic defect inspection of EUVL multilayer mask blanks: Standing wave photoemission electron microscopy
2006
Extreme ultraviolet lithography (EUVL) at 13.5 nm is the next generation lithography technique capable of printing sub-50 nm structures. With decreasing feature sizes to be printed, the requirements for the lithography mask also become more stringent in terms of defect sizes and densities that are still acceptable and the development of lithography optics has to go along with the development of new mask defect inspection techniques that are fast and offer high resolution (preferable in the range of the minimum feature size) at the same time. We report on the development and experimental results of a new 'at wavelength' full-field imaging technique for defect inspection of multilayer mask bl…